2SD1878 [Wing Shing]
SILICON DIFFUSED POWER TRANSISTOR(GENERAL DESCRIPTION); 硅扩散型功率晶体管（概述）
| 型号： | 2SD1878 |
| 厂家： | 
WING SHING COMPUTER COMPONENTS |
| 描述： | SILICON DIFFUSED POWER TRANSISTOR(GENERAL DESCRIPTION) |
| 文件： | 总1页 (文件大小：90K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SD1878
SILICON DIFFUSED POWER TRANSISTOR
GENERAL DESCRIPTION
Highvoltage,high-speed switching npn transistors in
a plastic envelope with integrated efficiency,primarily
for use in horizontal deflection circuites of colour
television receivers
QUICK REFERENCE DATA
TO-3PML
SYMBOL
VCESM
VCEO
IC
ICM
Ptot
VCEsat
Icsat
VF
PARAMETER
CONDITIONS
MIN
MAX
1500
600
5
UNIT
V
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
VBE = 0V
-
-
-
-
-
-
V
A
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Diode forward voltage
10
A
Tmb 25
60
W
V
IC = 4.0A; IB = 1.2A
f = 16KHz
5
-
A
IF = 4.0A
2.0
1.0
V
Fall time
IC=4A,IB1=-IB2=1.2A,VCC=140V
s
tf
LIMITING VALUES
SYMBOL
VCESM
VCEO
IC
PARAMETER
CONDITIONS
MIN
MAX
1500
600
5
UNIT
V
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
VBE = 0V
-
-
V
-
A
Collector current peak value
Base current (DC)
-
10
A
ICM
IB
-
2
A
Base current peak value
Total power dissipation
Storage temperature
-
-
3
A
IBM
Ptot
Tstg
Tj
Tmb 25
60
W
-55
-
150
150
Junction temperature
ELECTRICAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN
MAX
1.0
UNIT
mA
Collector cut-off current
VBE = 0V; VCE = VCESMmax
VBE = 0V; VCE = VCESMmax
Tj = 125
-
-
ICE
ICES
2.0
mA
Collector-emitter sustaining voltage
IB = 0A; IC = 100mA
L = 25mH
-
V
VCEOsust
Collector-emitter saturation voltages
Base-emitter satuation voltage
DC current gain
IC = 4.0A; IB = 1.2A
IC = 4.0A; IB = 1.2A
IC = 1A; VCE = 5V
IF = 4.0A
-
-
5
1.5
30
V
V
VCEsat
VBEsat
hFE
VF
fT
Cc
8
Diode forward voltage
2.0
-
V
MHz
pF
s
Transition frequency at f = 1MHz
Collector capacitance at f = 1MHz
Switching times(16KHz line deflecton circuit)
Turn-off storage time Turn-off fall time
IC = 0.1A; VCE = 10V
VCB = 10V
3
125
4.5
1.0
IC=4A,IB1=-IB2=1.2A,VCC=100V
IC=4A,IB1=-IB2=1.2A,VCC=100V
ts
tf
s
Wing Shing Computer Components Co., (H.K.)Ltd.
Homepage: http://www.wingshing.com
Tel:(852)2341 9276 Fax:(852)2797 8153
E-mail: wsccltd@hkstar.com
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